NDLI: A new lateral PNM Schottky collector bipolar transistor (SCBT) on SOI for nonsaturating VLSI logic design

Content Provider	IEEE Xplore Digital Library
Author	Jagadesh Kumar, M. Venkatesh Rao, D.
Copyright Year	1963
Abstract	The novel characteristics of a new lateral PNM Schottky collector bipolar transistor (SCBT) on silicon-on-insulator (SOI) are explored using two-dimensional (2D) simulation. The collector-base junction of the proposed lateral PNM transistor consists of a Schottky junction between n-base (N) and metal (M). The characteristics of this structure are compared with that of lateral PNP transistors on SOI. We demonstrate that the proposed structure has a superior performance in terms of reduced collector resistance, high current gain, negligible base widening, and very low reverse recovery time compared to the compatible lateral PNP transistors. A simple fabrication procedure is also suggested providing the incentive for experimental verification.
Sponsorship	IEEE Electron Devices Society
Starting Page	1070
Ending Page	1072
Page Count	3
File Size	240557
File Format	PDF
ISSN	00189383
Volume Number	49
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon on insulator technology Schottky barriers Bipolar transistor logic devices Bipolar transistors Resistance Numerical analysis Semiconductor device modeling Very-large-scale integration Integrated circuit design Logic design
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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