NDLI: Stack gate PZT/Al<sub>2</sub>O<sub>3</sub> one transistor ferroelectric memory

Content Provider	IEEE Xplore Digital Library
Author	Chin, A. Yang, M.Y. Sun, C.L. Chen, S.Y.
Copyright Year	1980
Abstract	We have developed a single transistor ferroelectric memory using stack gate PZT/Al/sub 2/O/sub 3/ structure. For the same /spl sim/40 /spl Aring/ dielectric thickness, the PZT/Al/sub 2/O/sub 3//Si gate dielectric has much better C-V characteristics and larger threshold voltage shift than those of PZT/SiO/sub 2//Si. Besides, the ferroelectric MOSFET also shows a large output current difference between programmed on state and erased off state. The <100 us erase time is much faster than that of flash memory where the switching time is limited by erase time.
Sponsorship	IEEE Electron Devices Society
Starting Page	336
Ending Page	338
Page Count	3
File Size	66409
File Format	PDF
ISSN	07413106
Volume Number	22
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ferroelectric materials Dielectrics Random access memory MOSFET circuits Flash memory Very large scale integration Sun Ferroelectric films Temperature Annealing
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Stack gate PZT/Al₂O₃ one transistor ferroelectric memory