NDLI: Fabrication of SiGe optical waveguides using VLSI processing techniques

Content Provider	IEEE Xplore Digital Library
Author	Pearson, M.R.T. Jessop, P.E. Bruce, D.M. Wallace, S. Mascher, P. Ojha, J.
Copyright Year	1983
Abstract	The fabrication of rib waveguides in SiGe using the local oxidation of silicon (LOCOS) was investigated. Samples consisted of strained Si/sub .97/Ge/sub .03/ or Si/sub .94/Ge/sub .06/ waveguiding layers with silicon cladding layers. The structural stability of these strained layers during thermal cycling up to 1050/spl deg/C was examined using X-ray rocking curve analysis, scanning electron microscopy, and Nomarski microscopy of etched samples. Since single SiGe layers sufficiently thick to support optical waveguiding are typically above the equilibrium critical thickness, dislocation formation during high-temperature processing is unavoidable. This work concentrated on minimizing these dislocations. It was found that the dislocation density induced by the processing can be minimized by using a strain-compensating mask layer as a barrier to oxidation. For a specified thermal oxide layer thickness, higher oxidation temperatures were found to minimize the dislocation density relative to oxidation at temperatures closer to the metastable limit. Furthermore, the large birefringence found in all strained-layer SiGe waveguides is significantly reduced after LOGOS processing. These effects were used to fabricate the first reported optical waveguides and photonic devices in SiGe using standard VLSI-type processing. The device is a 1.3/1.55-/spl mu/m duplexer with wavelength isolation of roughly 10 dB.
Sponsorship	IEEE Lasers and Electro-Optics Society Optical Society of America
Starting Page	363
Ending Page	370
Page Count	8
File Size	171431
File Format	PDF
ISSN	07338724
Volume Number	19
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optical waveguides Optical device fabrication Silicon germanium Germanium silicon alloys Very large scale integration Oxidation Scanning electron microscopy Temperature Structural engineering Etching
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics

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