NDLI: The effects of InP grown by He-plasma assisted epitaxy on quantum-well intermixing

Content Provider	IEEE Xplore Digital Library
Author	Yin, T. Letal, G.J. Robinson, B.J. Thompson, D.A.
Copyright Year	1965
Abstract	He-plasma assisted InP (He-InP) layers grown by gas source molecular beam epitaxy (GSMBE) have been employed to enhance quantum well (QW) intermixing induced by rapid thermal annealing in a 1.5 /spl mu/m InGaAsP QW laser structure. Inserting a 40 nm He-InP layer just above the active region enhances the blue-shift for anneal temperatures larger than 680/spl deg/C, and a 42 nm additional blue-shift is obtained at 750/spl deg/C for samples with the HeInP layer, compared to samples with normal InP replacing the He-InP. This is accompanied by a reduction in the photoluminescence (PL) intensity for anneal temperatures greater than 600/spl deg/C and is attributed to the migration of nonradiative defects from the He-InP layer into the QWs. Insertion of a thin InGaAs layer between the He-InP layer and the QW blocks the diffusion of these nonradiative defects into the QW. The results indicate that the He*-InP material could prove useful in QW intermixing to achieve integrated optoelectronic devices, in particular for high-frequency devices which require short carrier lifetimes.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	426
Ending Page	429
Page Count	4
File Size	75935
File Format	PDF
ISSN	00189197
Volume Number	37
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium phosphide Epitaxial growth Rapid thermal annealing Temperature Molecular beam epitaxial growth Gas lasers Quantum well lasers Photoluminescence Indium gallium arsenide Integrated optoelectronics
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Photoluminescence investigation of InGaAs/InP quantum wells grown by gas-source molecular-beam epitaxy with source-supply interruption

Characteristics of InGaAs/GaAs/GaInP quantum well lasers grown by gas-source molecular-beam epitaxy

2.1-µm Wavelength Strained InGaAs Multiple-Quantum-Well Lasers Grown by Metalorganic Vapor Phase Epitaxy assisted by Sb Surfactant

Strain-compensations for interfacial strain and average strain in InGaAs/InAlP highly compressive-strained multiple quantum well structures on InP grown by gas source molecular beam epitaxy

Metalorganic Vapor Phase Epitaxial Growth of InAs/InGaAs Multiple Quantum Well Structures on InP Substrates

Double heterojunction bipolar transistors with InP epitaxial layers grown by solid-source MBE

Growth of GaInNAs/GaAs quantum well lasers by plasma-assisted molecular beam epitaxy

Characteristics and abruptness of InGaAs/InP quantum well and optoelectronic applications of quantum wells grown by GSMBE

The growth of high quality InP/InGaAs/InGaAsP interfaces by CBE for SCH multi-quantum well lasers

The effects of InP grown by He-plasma assisted epitaxy on quantum-well intermixing

Similar Documents

Photoluminescence investigation of InGaAs/InP quantum wells grown by gas-source molecular-beam epitaxy with source-supply interruption

Characteristics of InGaAs/GaAs/GaInP quantum well lasers grown by gas-source molecular-beam epitaxy

2.1-µm Wavelength Strained InGaAs Multiple-Quantum-Well Lasers Grown by Metalorganic Vapor Phase Epitaxy assisted by Sb Surfactant

Strain-compensations for interfacial strain and average strain in InGaAs/InAlP highly compressive-strained multiple quantum well structures on InP grown by gas source molecular beam epitaxy

Metalorganic Vapor Phase Epitaxial Growth of InAs/InGaAs Multiple Quantum Well Structures on InP Substrates

Double heterojunction bipolar transistors with InP epitaxial layers grown by solid-source MBE

Growth of GaInNAs/GaAs quantum well lasers by plasma-assisted molecular beam epitaxy

Characteristics and abruptness of InGaAs/InP quantum well and optoelectronic applications of quantum wells grown by GSMBE

The growth of high quality InP/InGaAs/InGaAsP interfaces by CBE for SCH multi-quantum well lasers

The effects of InP grown by He-plasma assisted epitaxy on quantum-well intermixing