NDLI: Edge hole direct tunneling leakage in ultrathin gate oxide p-channel MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Kuo-Nan Yang Huan-Tsung Huang Ming-Jer Chen Yeou-Ming Lin Mo-Chiun Yu Jang, S.S.A. Yu, D.C.H. Mong-Song Liang
Copyright Year	1963
Abstract	This paper examines the edge direct tunneling (EDT) of holes from p/sup +/ polysilicon to underlying p-type drain extensions in off-state p-channel MOSFETs having ultrathin gate oxides that are 1.2 nm-2.2 nm thick. It is for the first time found that for thinner oxides, hole EDT is more pronounced than both conventional gate-induced drain leakage (GIDL) and gate-to-channel tunneling. As a result, the induced gate and drain leakage is more accurately measured per unit gate width. Terminal currents versus input voltage are measured from a CMOS inverter with gate oxide thickness T/sub OX/=1.23 nm, exhibiting the impact of EDT in two standby modes. For the first time, a physical model is derived for the oxide field E/sub OX/ at the gate edge by accounting for the heavy and light holes' subbands in the quantized accumulation polysilicon surface. This model relates E/sub OX/ to the gate-to-drain voltage, oxide thickness, and doping concentration of the drain extension. Once E/sub OX/ is known, an existing direct tunneling (DT) model consistently reproduces EDT current-voltage (I-V), and the tunneling path size extracted falls adequately within the gate-to-drain overlap region. The ultimate oxide thickness limit due to hole EDT is projected.
Sponsorship	IEEE Electron Devices Society
Starting Page	2790
Ending Page	2795
Page Count	6
File Size	156482
File Format	PDF
ISSN	00189383
Volume Number	48
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFETs
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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