NDLI: Recent developments of high power converters for industry and traction applications

Content Provider	IEEE Xplore Digital Library
Author	Bernet, S.
Copyright Year	1986
Abstract	The introduction of new high power devices like integrated gate commutated thyristors (IGCTs) and high voltage insulated gate bipolar transistors (IGBTs) accelerates the broad use of pulse width modulation (PWM) voltage source converters in industrial and traction applications. This paper summarizes the state-of-the-art of power semiconductors. The characteristics of IGCTs and high voltage IGBTs are described in detail. Both the design and loss simulations of a two level 1.14 MVA voltage source inverter and a 6 MVA three-level neutral point clamped voltage source converter with active front end enable a detailed comparison of both power semiconductors for high power PWM converters. The design and the characteristics of a commercially available IGCT neutral point clamped PWM voltage source converter for medium voltage drives are discussed. Recent developments and trends of traction converters at DC mains and AC mains are summarized.
Sponsorship	IEEE Power Electronics Society
Starting Page	1102
Ending Page	1117
Page Count	16
File Size	397128
File Format	PDF
ISSN	08858993
Volume Number	15
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Pulse width modulation converters Voltage Insulated gate bipolar transistors Thyristors Pulse width modulation Pulse width modulation inverters Power conversion Schottky diodes MOSFETs Silicon
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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