NDLI: Turn-on voltage investigation of GaAs-based bipolar transistors with Ga/sub 1-x/In/sub x/As/sub 1-y/N<sub>y</sub> base layers

Content Provider	IEEE Xplore Digital Library
Author	Welser, R.E. DeLuca, P.M. Pan, N.
Copyright Year	1980
Abstract	The fundamental lower limit on the turn on voltage of GaAs-based bipolar transistors is first established, then reduced with the use of a novel low energy-gap base material, Ga/sub 1-x/In/sub x/As/sub 1-y/N/sub y/. InGaP/GaInAsN DHBTs (x/spl sim/3y/spl sim/0.01) with high p-type doping levels (/spl sim/3/spl times/10/sup 19/ cm/sup -3/) and dc current gain (/spl beta//sub max//spl sim/68 at 234 /spl Omega///spl square/) are demonstrated. A reduction in the turn-on voltage over a wide range of practical base sheet resistance values (100 to 400 /spl Omega///spl square/) is established relative to both GaAs BJTs and conventional InGaP/GaAs HBTs with optimized base-emitter interfaces-over 25 mV in heavily doped, high dc current gain samples. The potential to engineer turn-on voltages comparable to Si- or InP-based bipolar devices on a GaAs platform is enabled by the use of lattice matched Ga/sub 1-x/In/sub x/As/sub 1-y/N/sub y/ alloys, which can simultaneously reduce the energy-gap and balance the lattice constant of the base layer when x/spl sim/3y.
Sponsorship	IEEE Electron Devices Society
Starting Page	554
Ending Page	556
Page Count	3
File Size	84637
File Format	PDF
ISSN	07413106
Volume Number	21
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Voltage Bipolar transistors Gallium arsenide Lattices Doping Gallium alloys Heterojunction bipolar transistors Sheet materials Temperature Double heterojunction bipolar transistors
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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