NDLI: Electron transport across bulk (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P barriers determined from the I-V characteristics of n-i-n diodes measured between 60 and 310 K

Content Provider	IEEE Xplore Digital Library
Author	Morrison, A.P. Lambkin, J.D. van der Poel, C.J. Valster, A.
Copyright Year	1965
Abstract	The electron transport characteristics of five n-i-n diodes with (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P intrinsic barrier regions of various aluminum composition x were determined from the measured I-V characteristics between 60 and 310 K. From these measurements, three different transport regimes were identified. Fowler-Nordheim tunneling was observed at temperatures below 215, 260, 110, 150, and 120 K for aluminum compositions of x=0.4, 0.5, 0.6, 0.7, and 1.0, respectively, with applied electric fields in excess of 5 MV/m. The temperature dependence of the Fowler-Nordheim tunneling currents is shown in AlGaInP for the first time with direct bandgap AlGaInP exhibiting a strong linear decrease in apparent barrier height with increasing temperature. The measured barrier height using the thermionic emission model yields values close to the expected conduction band offset between the GaInP spacer layers and the AlGaInP intrinsic barriers, as measured using high-pressure photoluminescence, and provides a novel technique for measuring the direct-indirect crossover composition in AlGaInP. It is shown that the lowest lying conduction band in AlGaInP is the dominant barrier to electron transport. This has important implications for the design of AlGaInP laser diodes.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	1293
Ending Page	1298
Page Count	6
File Size	169509
File Format	PDF
ISSN	00189197
Volume Number	36
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electrons Gain measurement Aluminum Tunneling Temperature dependence Diodes Photonic band gap Temperature measurement Thermionic emission Photoluminescence
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

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