NDLI: New designs of silicon pixel detectors fabricated from normal and oxygen-enriched silicon substrates

Content Provider	IEEE Xplore Digital Library
Author	Xie, X.B. Cho, H.S. Chien, C.Y. Liang, G.W. Huang, W. Li, Z.
Copyright Year	1963
Abstract	New designs of silicon pixel detectors have been developed for more radiation-hard CMS forward pixel sensors. The new designs differ from our previous ones in that the guard rings on the n/sup +/ side are replaced with a single wide (640 /spl mu/m) n/sup +/ implant, and the n/sup +/ side and the edge region of the p/sup +/ side are grounded, giving more graded potential distribution over the guard rings after irradiation. Thus, these designs have advantages for safe operation of the detectors at a high depletion voltage and for stability of readout chips. All designs were fabricated from normal and oxygen-enriched silicon substrates, and the radiation hardness effects for neutron (1 MeV equivalent) and proton (24 GeV) irradiation of these detectors were compared. Other electrical characteristics of these detectors such as leakage current, potential distribution over the guard rings and full depletion voltage were obtained using standard measurement techniques (I-V, V-V and TCT) before and after irradiation.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	1807
Ending Page	1811
Page Count	5
File Size	539712
File Format	PDF
ISSN	00189499
Volume Number	47
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radiation detectors Silicon radiation detectors Voltage Collision mitigation Implants Stability Neutrons Protons Electric variables Leak detection
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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