NDLI: The performance effects of crystal boundaries in cadmium zinc telluride radiation spectrometers

Content Provider	IEEE Xplore Digital Library
Author	Brunett, B.A. Van Scyoc, J.M. Hilton, N.R. Lund, J.C. James, R.B.
Copyright Year	1963
Abstract	The specific performance effects of extended crystal defects in cadmium zinc telluride (CZT) radiation spectrometers have been investigated. While it is generally accepted that defects such as grain boundaries and decorated twins can have a significant deleterious impact on the performance of semiconductor radiation spectrometers, the detailed mechanisms of degradation have been previously unexplored. Because of the difficulties of the high pressure Bridgman (HPB) growth process, CZT materials generally contain a large number of such defects, and the yield of defect-free crystals is comparatively low. High-resolution gamma-ray response mapping has been combined with analytical spectral simulations to relate the anomalies in the measured detector response to the likely originating defect. Examples of several different types of boundaries have been examined in a range of commercial CZT detectors, with the relevant parameters of the boundary being its trapping or channeling nature and the properties of the material on each side of the boundary.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	1353
Ending Page	1359
Page Count	7
File Size	1127007
File Format	PDF
ISSN	00189499
Volume Number	47
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Grain boundaries Spectroscopy Cadmium compounds Zinc compounds Degradation Crystalline materials Semiconductor materials Crystals Spectral analysis Analytical models
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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