NDLI: New experimental results of optically activated BMFET switches with different cell design

Content Provider	IEEE Xplore Digital Library
Author	Breglio, G. Cutolo, A. Irace, A. Spirito, P. Zeni, L.
Copyright Year	1986
Abstract	Optically activated semiconductor devices play a very attractive role in power circuits control applications. In fact, due to the very high galvanic isolation between the control circuit side and the power circuit side, these specific devices can solve the safety problems and eliminate the unintentional switching. In an earlier work, a detailed theoretical and numerical analysis of the BMFET as an optically controlled switch was presented. In this paper, the authors complete the previous analysis by presenting experimental results on the optical switching of various kinds of bipolar mode field effect transistor (BMFET) obtained with a low-power optical source. The BMFETs used are different in design parameters and geometries. The results obtained are in good agreement with the authors' previous theoretical and numerical previsions.
Sponsorship	IEEE Power Electronics Society
Starting Page	877
Ending Page	881
Page Count	5
File Size	143154
File Format	PDF
ISSN	08858993
Volume Number	14
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optical switches Optical control Power semiconductor switches Optical devices Semiconductor devices Galvanizing Safety devices Switching circuits Numerical analysis FETs
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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