NDLI: Theory of Alpha for P-N-P Diffused Junction Transistors

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Table of contents

The Transistor Issue

Transistor Lineage

Transistors in Our Civilian Economy

Transistors and the Military

Transistor Electronics: Imperfections, Unipolar and Analog Transistors

Present Status of Transistor Development

Properties of Silicon and Germanium

Preparation of Germanium Single Crystals

P-N Junctions by Impurity Introduction Through an Intermediate Metal Layer

Lifetime of Injected Carriers in Germanium

Silicon P-N Junction Alloy Diodes

A Developmental Germanium P-N-P Junction Transistor

Fused Impurity P-N-P Junction Transistors

Four-Terminal P-N-P-N Transistors

A Unipolar Field-Effect Transistor

Junction Fieldistors

The Control of Frequency Response and Stability of Point-Contact Transistors

Low-Drain Transistor Audio Oscillator

A Junction Transistor Tetrode for High-Frequency Use

Effects of Space-Charge Layer Widening in Junction Transistors

New Photoelectric Devices Utilizing Carrier Injection

Properties of the M-1740 P-N Junction Photocell

Measurement of Minority Carrier Lifetime in Germanium

Theory of Alpha for P-N-P Diffused Junction Transistors

Effect of Electrode Spacing on the Equivalent Base Resistance of Point-Contact Transistors

Transistor Operation: Stabilization of Operating Points

Oscilloscopic Display of Transistor Static Electrical Characteristics

On the Theory of Noise in P-N Junctions and Related Devices

An Experimental Investigation of Transistor Noise

Transistor Noise in Circuit Applications

Variation of Transistor Parameters with Temperature

Frequency Variations of Current-Amplification Factor for Junction Transistors

Transistor Amplifier-Cutoff Frequency

On Some Transients in the Pulse Response of Point-Contact Germanium Diodes

Pulse Duration and Repetition Rate of a Transistor Multivibrator

Junction Transistor Equivalent Circuits and Vacuum-Tube Analogy

Matrix Representation of Transistor Circuits

Dynamics of Transistor Negative-Resistance Circuits

Control Applications of the Transistor

Power Rectifiers and Transistors

A High-Voltage, Medium-Power Rectifier

Application of Transistors to High-Voltage Low-Current Supplies

Printed Circuitry for Transistors

Transistors in Airborne Equipment

Transistor Trigger Circuits

Transistors in Switching Circuits

Graphical Analysis of Some Transistor Switching Circuits

A Transistor Reversible Binary Counter

An Optical Position Encoder and Digit Register

Regenerative Amplifier for Digital Computer Applications

A Transistor Shift Register and Serial Adder

Contributors to Proceedings of the I.R.E.

Institute news and radio notes

Abstracts and references

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Theory of Alpha for P-N-P Diffused Junction Transistors

Content Provider	IEEE Xplore Digital Library
Author	Steele, E.L.
Copyright Year	1931
Abstract	Equations are developed for the emitter and collector currents for this type of transistor, and the resulting expressions are then used to obtain the current-gain factor. The low-frequency value of the current-gain factor and its high-frequency cutoff value are shown to depend strongly on the width of the base region, the behavior at high frequencies being better for small base width. The high-frequency behavior when used in grounded emitter applications depends more directly on the lifetime of holes in the germanium and shows only a second-order dependence on the base width; the lower the lifetime the higher the frequency cutoff value.
Starting Page	1424
Ending Page	1428
Page Count	5
File Size	1058261
File Format	PDF
ISSN	00968390
Volume Number	40
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1952-11-01
Access Restriction	Subscribed
Rights Holder	The Institute of Radio Engineers, Inc. (IRE)
Subject Keyword	P-n junctions Germanium Voltage Cutoff frequency Geometry Equations Impurities Charge carrier processes Boundary conditions
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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