NDLI: Bandwidth enhancement for p-end-illuminated InP/InGaAs/InP p-i-n photodiodes by utilizing symmetrical doping profiles

Content Provider	IEEE Xplore Digital Library
Author	Chong-Long Ho Meng-Chyi Wu Wen-Jeng Ho Jy-Wang Liaw
Copyright Year	1983
Abstract	This paper shows that the bandwidth of a p-end-illuminated planar InP-InGaAs-InP heterojunction p-i-n photodiode can be promoted by using a rather symmetrical doping profile that is produced through diffusion depth control. Caused by extra-depleted InP region in the end of p-InP, the device with symmetrical doping profile has additional series capacitance and thus has a smaller total capacitance than conventional asymmetrical doping profile. Such devices with 0.3 /spl mu/m depleted InP cap region, together with 1 /spl mu/m depleted InGaAs absorption region and 0.3 /spl mu/m depleted InP buffer region, having the capacitance as small as those devices with 1.6 /spl mu/m depletion region, while have the carrier transit time as short as those devices with 1.3 /spl mu/m depletion region. Under appropriate bias condition, which is required for getting rid of the heterointerface effects, the symmetrical device as stated with 40 /spl mu/m junction diameter can have a 3 dB bandwidth exceeding 17 GHz without inductance optimization. For device with conventional asymmetrical doping profile, that is, the p-n junction locating at /spl sim/0.1 /spl mu/m deep in the InGaAs layer, only a bandwidth of about 15 GHz can be obtained. Due to the same thickness of InGaAs absorption layer, both devices have similar responsivity of /spl sim/0.8 A/W at -5 V at 1.3 /spl mu/m wavelength. However, the heterointerface exposed in the depletion region results in several detrimental effects in symmetrical devices, such as interface-generation current, which leads to slightly increased dark current, and barrier/traps for hole transport, which lead to inferior photoresponse at low biases.
Sponsorship	IEEE Lasers and Electro-Optics Society Optical Society of America
Starting Page	912
Ending Page	917
Page Count	6
File Size	178351
File Format	PDF
ISSN	07338724
Volume Number	17
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium phosphide Bandwidth Indium gallium arsenide PIN photodiodes Doping profiles Capacitance Absorption Lead Heterojunctions Inductance
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Ultrafast, dual-depletion region, InGaAs/InP p-i-n detector

Top-illuminated InGaAs/InP p-i-n photodiodes with a 3-dB bandwidth in excess of 26 GHz

High speed InGaAs/InP p-i-n photodiodes fabricated on a semi-insulating substrate

An InGaAs/InP p-i-n-JFET OEIC with a wing-shaped p/sup +/-InP layer

Avalanche buildup time of an InP/InGaAsP/InGaAs APD at high gain

Reliability of InGaAs/InP long-wavelength p-i-n photodiodes passivated with polyimide thin film

An InP/InGaAs p-i-n/HBT monolithic transimpedance photoreceiver

Optimum design of delta -doped InGaAs avalanche photodiode by using quasi-ionization rates

Planar InGaAs p-i-n Photodiodes With Transparent-Conducting-Based Antireflection and Double-Path Reflector

Bandwidth enhancement for p-end-illuminated InP/InGaAs/InP p-i-n photodiodes by utilizing symmetrical doping profiles

Similar Documents

Ultrafast, dual-depletion region, InGaAs/InP p-i-n detector

Top-illuminated InGaAs/InP p-i-n photodiodes with a 3-dB bandwidth in excess of 26 GHz

High speed InGaAs/InP p-i-n photodiodes fabricated on a semi-insulating substrate

An InGaAs/InP p-i-n-JFET OEIC with a wing-shaped p/sup +/-InP layer

Avalanche buildup time of an InP/InGaAsP/InGaAs APD at high gain

Reliability of InGaAs/InP long-wavelength p-i-n photodiodes passivated with polyimide thin film

An InP/InGaAs p-i-n/HBT monolithic transimpedance photoreceiver

Optimum design of delta -doped InGaAs avalanche photodiode by using quasi-ionization rates

Planar InGaAs p-i-n Photodiodes With Transparent-Conducting-Based Antireflection and Double-Path Reflector

Bandwidth enhancement for p-end-illuminated InP/InGaAs/InP p-i-n photodiodes by utilizing symmetrical doping profiles