NDLI: A new lateral trench-gate conductivity modulated power transistor

Content Provider	IEEE Xplore Digital Library
Author	Cai, J. Sin, J.K.O. Mok, P.K.T. Wai-Tung Ng Lai, P.P.T.
Copyright Year	1963
Abstract	In this paper, a new conductivity modulated power transistor called the Lateral Trench-Gate Bipolar Transistor (LTGBT) is presented. This structure incorporates a trench-gate in which the locations of the channel and source in conventional LIGBT have been interchanged. This channel and source arrangement results in significant improvement in latch-up current density. Experimental results indicate that the static and dynamic latch-up current densities are improved by 2.3 and 4.2 times, respectively, compared to those of the LIGBT at a n/sup +/ cathode length of 5 /spl mu/m. Dependence of the latch-up current density of the LTGBT on the design of the n/sup +/ and p/sup +/ cathode regions is examined both numerically and experimentally. The maximum controllable current density is found to be increased when the space between the trench-gate and the p/sup +/ cathode is reduced. Specifically, as the space is decreased to 2 /spl mu/m, no latch-up phenomenon was observed. This nonlatch-up characteristic is obtained at the expense of a slight increase (0.8 V) in threshold voltage.
Sponsorship	IEEE Electron Devices Society
Starting Page	1788
Ending Page	1793
Page Count	6
File Size	191697
File Format	PDF
ISSN	00189383
Volume Number	46
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Power bipolar transistors
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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