NDLI: Enhanced modulation bandwidth (20 GHz) of In/sub 0.4/Ga/sub 0.6/As-GaAs self-organized quantum-dot lasers at cryogenic temperatures: role of carrier relaxation and differential gain

Content Provider	IEEE Xplore Digital Library
Author	Klotzkin, D. Kamath, K. Vineberg, K. Bhattacharya, P. Murty, R. Laskar, J.
Copyright Year	1989
Abstract	Measurements of the threshold current, slope efficiency and optical modulation characteristics of self-assembled InGaAs-GaAs quantum-dot lasers have been made in the temperature range of 20-200 K in order to understand the carrier dynamics in these devices. The dc characteristics of these devices showed a region of almost temperature independent threshold current up to 85 K (T/sub 0/=670 K) with a maximum slope efficiency at 150 K. The maximum measured bandwidth increased from 5 GHz at room temperature to 20 GHz at 80 K. This is consistent with the bandwidth being limited by carrier relaxation time through electron-hole scattering.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	932
Ending Page	934
Page Count	3
File Size	55660
File Format	PDF
ISSN	10411135
Volume Number	10
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Bandwidth Quantum dots Threshold current Quantum dot lasers Current measurement Optical modulation Temperature distribution Cryogenics Gain measurement Atomic measurements
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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DC, modulation, and gain-switched characteristics of self-organized In/sub 0.4/Ga/sub 0.6/As/GaAs quantum dot room temperature lasers

Enhanced modulation bandwidth (20 ghz) of in ga as–gaas self-organized quantum-dot lasers at cryogenic temperatures: role of carrier relaxation and differential gain.

Modulation characteristics of In/sub 0.4/Ga/sub 0.6/As/GaAs quantum dot gain-coupled distributed feedback lasers

Modulation properties and the phonon bottleneck in self-organized single and multilayer In/sub 0.4/Ga/sub 0.6/As/GaAs quantum dot room temperature lasers

Quantum capture times at room temperature in high-speed In/sub 0.4/Ga/sub 0.6/As-GaAs self-organized quantum-dot lasers

Quantum capture times at room temperature in high-speed In/sub 0.4/Ga/sub 0.6/As-GaAs self-organized quantum-dot lasers

Intersubband quantum cascade electroluminescent device with self-organized In/sub 0.4/Ga/sub 0.6/As/GaAs quantum dot active region

Temperature-dependent large signal modulation and Auger recombination in In/sub 0.4/Ga/sub 0.6/As quantum-dot lasers

Modulation characteristics of high-speed tunnel injection In/sub 0.4/Ga/sub 0.6/As quantum dot lasers

Enhanced modulation bandwidth (20 GHz) of In/sub 0.4/Ga/sub 0.6/As-GaAs self-organized quantum-dot lasers at cryogenic temperatures: role of carrier relaxation and differential gain

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DC, modulation, and gain-switched characteristics of self-organized In/sub 0.4/Ga/sub 0.6/As/GaAs quantum dot room temperature lasers

Enhanced modulation bandwidth (20 ghz) of in ga as–gaas self-organized quantum-dot lasers at cryogenic temperatures: role of carrier relaxation and differential gain.

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Modulation properties and the phonon bottleneck in self-organized single and multilayer In/sub 0.4/Ga/sub 0.6/As/GaAs quantum dot room temperature lasers

Quantum capture times at room temperature in high-speed In/sub 0.4/Ga/sub 0.6/As-GaAs self-organized quantum-dot lasers

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