NDLI: Modeling magnetically enhanced RIE of aluminum alloy films using neural networks

Content Provider	IEEE Xplore Digital Library
Author	Byungwhan Kim Kwangho Kwon
Copyright Year	1988
Abstract	Aluminum (Al) and its alloy films are widely used for fabricating VLSI interconnections. The discharge behavior of a magnetically enhanced reactive ion etching (MERIE) of Al(Si) has been modeled using neural networks. A 2/sup 6-1/ fractional factorial experiment was employed to characterize etch variations with RF power, pressure, magnetic field and gas mixtures of Cl/sub 2/, BCl/sub 3/, and N/sub 2/. Responses of an Al(Si) film etched in a chlorine-based plasma include etch rate, selectivity to oxide, anisotropy and bias of critical dimension (CD). The generalization accuracy of the models, measured by the root-mean squared error (RMS) on a test set, are 285 /spl Aring//min for etch rate, 5.58 for oxide selectivity, 0.08 for anisotropy, and 3.82 /spl Aring//min for CD bias. Al(Si) etch rate was found to be chlorine-dependent with significantly affected by magnetic field variations. For the other etch responses, RF power was dominant. Gas additives such as BCl/sub 3/ and N/sub 2/ were seen to have conflicting effects on etch outputs. Predicted Al(Si) etch behaviors from neural process models were in qualitative good agreement with reported experimental results.
Sponsorship	IEEE Electron Devices Society IEEE Components, Packaging, and Manufacturing Technology Society IEEE Reliability Society IEEE Solid-State Circuits Society
Starting Page	692
Ending Page	695
Page Count	4
File Size	152794
File Format	PDF
ISSN	08946507
Volume Number	11
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Aluminum alloys Magnetic films Etching Magnetic anisotropy Perpendicular magnetic anisotropy Radio frequency Plasma measurements Anisotropic magnetoresistance Magnetic field measurement Very large scale integration
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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