NDLI: Effects of isochronal annealing and irradiation temperature on radiation-induced trapped charge

Content Provider	IEEE Xplore Digital Library
Author	Fleetwood, D.M. Winokur, P.S. Shaneyfelt, M.R. Riewe, L.C. Flament, O. Paillet, P. Leray, J.L.
Copyright Year	1963
Abstract	Radiation-induced trapped charge densities in 45-nm radiation-hardened oxides are estimated via capacitance-voltage (C-V) and thermally stimulated current (TSC) techniques as functions of irradiation and/or isochronal anneal temperature. Reductions in trapped-hole charge were greater for -10 V and 0 V isochronal anneals than for 10 V anneals. This is attributed to enhanced electron-hole dipole pairing during positive-bias anneal. Between 22/spl deg/C and 125/spl deg/C, the trapped electron charge increases for 10 V isochronal anneals, and is approximately constant for 0 V and -10 V anneals. Interface-trap charge decreases for 0 V isochronal annealing above 80/spl deg/C, and /spl plusmn/10 V annealing above 100/spl deg/C. Elevated temperature irradiation at 10 V shows similar trends to 10 V isochronal anneals. Trapped-hole energy scales derived from C-V measurements for positive or zero bias isochronal anneals are found to be inaccurate, due to the different temperature dependencies of trapped-hole annealing and trapped-electron buildup. Refined estimates of trapped-hole attempt-to-escape frequency are obtained via TSC. Isochronal annealing and elevated temperature irradiation techniques generally cannot be used for hardness assurance testing unless the results are "calibrated" to the low-rate irradiation or long-term annealing response for a given technology.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	2366
Ending Page	2374
Page Count	9
File Size	1049941
File Format	PDF
ISSN	00189499
Volume Number	45
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Temperature sensors Frequency estimation Testing Capacitance-voltage characteristics MOS devices Electron traps Laboratories USA Councils Energy measurement
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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