NDLI: A five-port deembedding method for floating two-port networks

Content Provider	IEEE Xplore Digital Library
Author	Mahmoudi, R. Tauritz, J.L.
Copyright Year	1963
Abstract	Radio frequency (RF) high-power bipolar transistors are often constructed with the collector accessible at the bottom of the device. Characterization is carried out on substrate mounted devices. The classical methods developed for the "on wafer" capacitance-voltage (CV) and alternating current (ac) measurement of grounded devices are then no longer applicable. A (general) deembedding algorithm is presented in which the medium surrounding the transistor is taken to be a generic five port and the transistor is treated as a floating two port. Using this approach, one can model a wide variety of configurations, including coupled lines, bondwire complexes with mutual coupling, vies and packages enabling one pass deembedding. Use of this algorithm facilitates an integrated approach improving accuracy and speed. Implementation of the five-port algorithm in HP's-microwave design software, MDS, and HP's parameter extraction software, IC-CAP as well as its application to high-frequency power transistor modeling are described.
Sponsorship	IEEE Instrumentation and Measurement Society Bureau international des poids et mesures IEEE International Bureau of Weights and Measures (BIPM) URSI NBS Agency Ind. Sci. & Technol., Min. Int. Trade & Ind. Sci. Council Japan International Union of Pure and Applied Physics (IUPAP) NIST NRCC National Conference of Standards Laboratories (NCSL) Allen Osborne Associates Andeen-Hagerling, Inc. Ballantine Lab. Inc. Clarke-Hess Communications Research Corp. Fluke Corporation Guildline Instruments Hewlett-Packard Co. Julie Res. Lab. Inc. Keithley Instruments, Inc. Measurements International Ltd. Canada QuadTech Inc. Quantum Design Inc. Rotek Instrum. Corp. Tegam Inc. Tektronix Inc
Starting Page	482
Ending Page	488
Page Count	7
File Size	636602
File Format	PDF
ISSN	00189456
Volume Number	47
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-04-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radio frequency Mutual coupling Bipolar transistors Capacitance-voltage characteristics Capacitance measurement Current measurement Bonding Packaging Software algorithms Software design
Content Type	Text
Resource Type	Article
Subject	Instrumentation Electrical and Electronic Engineering

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
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8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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