NDLI: Numerical and experimental characterization of single- and double-gate race-track-shaped field emitter structures

Content Provider	IEEE Xplore Digital Library
Author	Baoping Wang Sin, J.K.O. Jun Cai Poon, V.M.C. Chen Wang Yongming Tang Linsu Tong
Copyright Year	1963
Abstract	In this paper, numerical and experimental characterization of new singleand double-gate race-track-shaped field emitter structures are reported. The race-track-shaped edge emission is used to provide good uniformity and large field emission current density, and the double-gate control is used to provide small turn-on voltage and minimum gate current. Experimental results show that the turn-on voltage of the single-gate structure is approximately 100 V, and the field emission current density is approximately 2.4 A/cm/sup 2/. Furthermore, field emission characteristics of the single- and double-gate structures are numerically simulated. Results show that turn-on voltage of the double-gate structure is reduced by 30% and ratio of anode current to gate current is increased by 36 times compared to that of the single-gate structure at a gate voltage of 350 V.
Sponsorship	IEEE Electron Devices Society
Starting Page	554
Ending Page	559
Page Count	6
File Size	148535
File Format	PDF
ISSN	00189383
Volume Number	45
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Current density Flat panel displays Electron emission Silicon compounds Numerical simulation Radiofrequency amplifiers Microelectronics Voltage control Anodes Solid state circuits
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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