NDLI: Fabrication of high-speed resonant cavity enhanced Schottky photodiodes

Content Provider	IEEE Xplore Digital Library
Author	Ozbay, E. Islam, M.S. Onat, B. Gokkavas, M. Aytur, O. Tuttle, G. Towe, E. Henderson, R.H. Selim Unlu, M.
Copyright Year	1989
Abstract	We report the fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode. The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption region (In/sub 0.08/Ga/sub 0.92/As) and a distributed AlAs-GaAs Bragg mirror. The Schottky contact metal serves as a high-reflectivity top mirror in the RCE detector structure. The devices were fabricated by using a microwave-compatible fabrication process. The resulting spectral photo response had a resonance around 895 nm, in good agreement with our simulations. The full-width-at-half-maximum (FWHM) was 15 nm, and the enhancement factor was in excess of 6. The photodiode had an experimental setup limited temporal response of 18 ps FWHM, corresponding to a 3-dB bandwidth of 20 GHz.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	672
Ending Page	674
Page Count	3
File Size	317360
File Format	PDF
ISSN	10411135
Volume Number	9
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Fabrication Resonance Photodiodes Detectors Schottky barriers Mirrors Testing Electromagnetic wave absorption Microwave devices Bandwidth
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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