NDLI: Degradation mechanism in carbon-doped GaAs minority-carrier injection devices [HBTs]

Content Provider	IEEE Xplore Digital Library
Author	Fushimi, H. Wada, K.
Copyright Year	1963
Abstract	Degradation behavior and mechanism of GaAs-based devices under minority-carrier injection has been studied by measuring the increase in the leakage current and the luminescence lifetime of minority carriers. It is found that hydrogen unintentionally incorporated in GaAs-based devices induces degradation under minority-carrier injection, i.e., increase in injection leakage current at low bias voltage. "Isolated" hydrogen donors (H/sup +/) induce rapid degradation, and even carbon-hydrogen (C-H) complexes which are believed to be electrically neutral induce slow degradation. Degradation is induced by the decomposition of the C-H complexes, enhanced by minority-carrier injection producing electrically active isolated hydrogen donors (H/sup +/). The kinetics of the leakage current increase are well explained by the decomposition kinetics of the C-H complexes. Under minority-carrier injection, H/sup +/ changes to hydrogen acceptors (H/sup - /) by capturing two electrons. Hydrogen donors (H/sup +/) and hydrogen acceptors (H/sup -/) combine and become a molecular hydrogen which Is thought to form {111} platelets. This decomposition mechanism are not due to recombination-enhanced defect reaction (REDR) but is related to charge state effects by two-electron capturing. We infer that the degradation mechanism is closely related to the leakage through the {111} platelets.
Sponsorship	IEEE Electron Devices Society
Starting Page	1996
Ending Page	2001
Page Count	6
File Size	98869
File Format	PDF
ISSN	00189383
Volume Number	44
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Degradation Gallium arsenide Hydrogen Leakage current Kinetic theory Current measurement Luminescence Low voltage Electrons Spontaneous emission
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Degradation mechanism in carbon-doped GaAs minority-carrier injection devices

Hot carrier induced emitter junction degradation of AlGaAs/GaAs HBTs

Hydrogen and Carbon-Related Defects in Heavily Carbon-Doped GaAs Induced Degradation under Minority-Carrier Injection

RIBE And Sulfur-passivated For GaAiAs/GaAs BH Lasers

Subthreshold conduction in uniformly doped epitaxial GaAs MESFETs

Characterization of current-induced degradation in Be-doped HBTs based in GaAs and InP

Base and collector leakage currents and their relevance to the reliability of AlGaAs/GaAs heterojunction bipolar transistors

Safe Operating Current Density and Failure modes of Carbon doped base AlGaAs/GaAs HBTs

Impact ionization and light emission in AlGaAs/GaAs HEMT's

Degradation mechanism in carbon-doped GaAs minority-carrier injection devices [HBTs]

Similar Documents

Degradation mechanism in carbon-doped GaAs minority-carrier injection devices

Hot carrier induced emitter junction degradation of AlGaAs/GaAs HBTs

Hydrogen and Carbon-Related Defects in Heavily Carbon-Doped GaAs Induced Degradation under Minority-Carrier Injection

RIBE And Sulfur-passivated For GaAiAs/GaAs BH Lasers

Subthreshold conduction in uniformly doped epitaxial GaAs MESFETs

Characterization of current-induced degradation in Be-doped HBTs based in GaAs and InP

Base and collector leakage currents and their relevance to the reliability of AlGaAs/GaAs heterojunction bipolar transistors

Safe Operating Current Density and Failure modes of Carbon doped base AlGaAs/GaAs HBTs

Impact ionization and light emission in AlGaAs/GaAs HEMT's

Degradation mechanism in carbon-doped GaAs minority-carrier injection devices [HBTs]