NDLI: Potential design and transport property of 0.1-/spl mu/m MOSFET with asymmetric channel profile

Content Provider	IEEE Xplore Digital Library
Author	Odanaka, S. Hiroki, A.
Copyright Year	1963
Abstract	This paper describes potential design and transport property of a 0.1-/spl mu/m n-MOSFET with asymmetric channel profile, which is formed by the tilt-angle ion-implantation after gate electrode formation. The relation between device performance and transport property of the asymmetric 0.1-/spl mu/m device is explored by Monte Carlo simulations, and measured electrical characteristics. The self-consistent Monte Carlo device simulation coupled with a process simulator reveals higher electron velocity at the source end of the channel and velocity overshoot at the source side of the channel, and the smaller high-energy tail of the distribution in the drain. This transport property creates high drain current, large transconductance, and low substrate current of the 0.1-/spl mu/m n-MOSFET with asymmetric channel profile.
Sponsorship	IEEE Electron Devices Society
Starting Page	595
Ending Page	600
Page Count	6
File Size	175937
File Format	PDF
ISSN	00189383
Volume Number	44
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-04-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits Electric variables Monte Carlo methods Electrodes Fabrication Electric variables measurement Transconductance Poisson equations Implants Boron
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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