NDLI: Bias and temperature dependence of homogeneous hot-electron injection from silicon into silicon dioxide at low voltages

Content Provider	IEEE Xplore Digital Library
Author	Fischer, B. Ghetti, A. Selmi, L. Bet, R. Sangiorgi, E.
Copyright Year	1963
Abstract	In this paper, new homogeneous hot-electron injection data at 300 K and 77 K is provided covering applied voltages from well below to well above the Si-SiO/sub 2/ barrier height, and a wide range of oxide fields. We found that, in contrast to the MOSFET case, homogeneous injection shows two different regimes for accelerating voltages below and above the barrier height. A simple interpretation of the data is proposed, and supported by Monte Carlo (MC) simulations of the injection experiment. Essentially, the two regimes are the signature of a marked transition between an electron population mostly heated by the electric field, and a tail population created by additional but less efficient energy gain mechanisms, leading to a sharp transition in the carrier distribution function. The details of the bias and temperature dependence of injection are then interpreted as the combined effect of tunneling and carrier distribution. Furthermore, possible implications on MOSFET gate currents are briefly discussed.
Sponsorship	IEEE Electron Devices Society
Starting Page	288
Ending Page	296
Page Count	9
File Size	341527
File Format	PDF
ISSN	00189383
Volume Number	44
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature dependence Voltage MOSFET circuits Secondary generated hot electron injection Acceleration Monte Carlo methods Resistance heating Probability distribution Distribution functions Tunneling
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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