NDLI: Amorphous silicon thin-film transistors on steel foil substrates

Content Provider	IEEE Xplore Digital Library
Author	Wagner, S.
Copyright Year	1980
Abstract	We report the successful fabrication of high-quality a-Si:H thin-film transistors (TFTs) on stainless steel foil substrates. TFTs with an inverted-staggered structure were grown on 200-/spl mu/m thick stainless steel foil. These TFTs show typical ON/OFF current ratios of 10/sup 7/, OFF currents on the order of 10/sup -12/ A, good linear and saturation current behavior, subthreshold slopes of 0.5 V/decade, and linear channel mobilities of 0.5 cm/sup 2//V. In addition, we have demonstrated that these TFTs are capable of withstanding significant mechanical shocks, as well as macroscopic deformation of the substrate, while remaining functional. This work demonstrates that transistor circuits can be made on a flexible, nonbreakable substrate. Such circuits would be highly useful in reflective or emissive displays, and in other applications that require rugged macroelectronic circuits.
Sponsorship	IEEE Electron Devices Society
Starting Page	578
Ending Page	580
Page Count	3
File Size	316617
File Format	PDF
ISSN	07413106
Volume Number	17
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Amorphous silicon Thin film transistors Steel Substrates Chromium Displays Glass Optical films Iron alloys Plastic films
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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