NDLI: Metallurgical stability of ohmic contacts on thin base InP/InGaAs/InP HBT's

Content Provider	IEEE Xplore Digital Library
Author	Chor, E.F. Malik, R.J. Hamm, R.A. Ryan, R.
Copyright Year	1980
Abstract	The metallurgical stability of ohmic contacts: Pt, Pt/Ti, Au/Ti, Au/Pt/Ti, and Au/Pt/Ti/W, on a 500 /spl Aring/ thick p/sup +/-InGaAs base of InP/InGaAs/InP HBTs have been investigated as a function of anneal temperature. All contacts were stable after a 300/spl deg/C-30 s anneal. Pt contact failed at 350/spl deg/C whereas Pt/Ti, Au/Ti, and Au/Pt/Ti contacts failed at 400/spl deg/C. The failure mechanism was a collector leakage short owing to the penetration of Pt or Ti through the thin base. Only HBTs with Au/Pt/Ti/W contact were still functional after a 400/spl deg/C anneal with no apparent shift in the turn-on voltage for the emitter and collector junctions.
Sponsorship	IEEE Electron Devices Society
Starting Page	62
Ending Page	64
Page Count	3
File Size	337011
File Format	PDF
ISSN	07413106
Volume Number	17
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium phosphide Stability Ohmic contacts Indium gallium arsenide Heterojunction bipolar transistors Gold Annealing Metallization Temperature Contact resistance
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Metallurgical stability of ohmic contacts on thin base InP/InGaAs/InP HBT's