NDLI: The dual gate emitter switched thyristor (DG-EST)

Content Provider	IEEE Xplore Digital Library
Author	Sridhar, S. Baliga, B.J.
Copyright Year	1980
Abstract	A new device structure, called the dual gate emitter switched thyristor (DG-EST), is introduced for simultaneously obtaining on-state voltage drops lower than that of the conventional emitter switched thyristor (C-EST) and the high-voltage current saturation features of the Dual Channel EST (DC-EST). The DG-EST contains a DC-EST section and a C-EST section with a common thyristor section that can be controlled using two independent gate electrodes. When a positive bias is applied to both the gates, the device operates in a thyristor mode with the thyristor current constrained to flow through two lateral MOSFETs which minimizes the on-state voltage drop. When a "zero" bias is applied to the gate of the conventional EST, the device exhibits high-voltage current saturation, with the bias on the gate of the DC-EST controlling the saturated current. In this paper, the results of measurements performed on devices fabricated with a six-mask IGBT-like process are reported.
Sponsorship	IEEE Electron Devices Society
Starting Page	25
Ending Page	27
Page Count	3
File Size	297122
File Format	PDF
ISSN	07413106
Volume Number	17
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thyristors Insulated gate bipolar transistors MOSFET circuits Current density Anodes Electrodes Performance evaluation Voltage control Protection
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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