NDLI: Cross section measurements and upset rate calculations

Content Provider	IEEE Xplore Digital Library
Author	Petersen, E.
Copyright Year	1963
Abstract	This paper discusses the information about device upset rates that is contained in the experimental heavy ion cross section curve. The width and shape of the curve are determined by intra-cell variations of charge collection, not by cell to cell variations, as previously believed, If we assume that there is a unique charge that must appear on the transistor terminal to cause upset, and if there is a unique charge deposition depth and volume, then the cross section curve is determined by variations of effective charge collection gain inside the device. The fraction of a cell that has a given charge collection gain can be determined from the parameters that describe the cross section curve. The gain probability can also be expressed in terms of the lognormal function. The cross section curve can be described in terms of the cumulative lognormal function. This three parameter approach appears to be an improvement over the four parameter Weibull description. The upset rate calculation can then be expressed in terms of an integration over the variation of gain as represented by the measured cross section curve.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	2805
Ending Page	2813
Page Count	9
File Size	1048080
File Format	PDF
ISSN	00189499
Volume Number	43
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Shape Nuclear measurements USA Councils Gain measurement Measurement standards Extraterrestrial measurements Weibull distribution Energy loss
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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