NDLI: Performances of SI GaAs detectors fabricated with implanted ohmic contacts

Content Provider	IEEE Xplore Digital Library
Author	Nava, F. Alietti, M. Canali, C. Cavallini, A. Chiossi, C. del Papa, C. Re, V. Lanzieri, C.
Copyright Year	1963
Abstract	The slow component of the output pulse of Semi-Insulating (SI) Gallium Arsenide (GaAs) particle detectors, which affects charge collection efficiency (cce), has been generally attributed to trapping/detrapping effects. However, most of the detectors analyzed in the literature can only be operated below the voltage V/sub d/ necessary to extend the electric field all the way to the ohmic contact, making difficult to distinguish between the effect of the non-active part of the detector and that of trapping/detrapping. To do that, we have carefully analyzed the output signals of SI GaAs detectors, operated below and above V/sub d/ and irradiated with /sup 241/Am /spl alpha/ particles. When the detector is biased below V/sub d/ the output signals are affected also by the non-active part of the detector itself, while, when the detector is operated above V/sub d/, the output signals are only affected by trapping/detrapping of charge carriers. We found that trapping/detrapping is only relevant for the hole contribution to the signal. Trapping/detrapping effects are in agreement with the characteristics of deep levels present in the detectors as analyzed by means of PICTS (Photo Induced Current Transient Spectroscopy) and P-DLTS (Photo Deep Level Transient Spectroscopy).
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	1130
Ending Page	1136
Page Count	7
File Size	768450
File Format	PDF
ISSN	00189499
Volume Number	43
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Ohmic contacts Radiation detectors Voltage Charge carriers Transient analysis Spectroscopy Schottky barriers Silicon radiation detectors Irrigation
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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