NDLI: Optimization of copper wire bonding on Al-Cu metallization

Content Provider	IEEE Xplore Digital Library
Author	Nguyen, L.T. McDonald, D. Danker, A.R. Ng, P.
Copyright Year	1994
Abstract	This paper reports the successful implementation of copper wire ball bonding for selected TO-220 devices on a high volume commercial scale. Since August 1992, copper wire bonding has been used in production at National Semiconductor Corp. The development of copper wire ball bonding involves a three-prong approach: optimum pad metal composition, modifications to the wire bonder and optimization of the assembly parameters. the critical material parameter is bond pad hardness. This needs to be above a critical threshold value to avoid silicon cratering. The metal composition best suited for the wire bonding process is sputtered Al-Cu(2%). Typical production yields of 99.8% at lead bond are obtained with 1.5 mil (37.5 /spl mu/m) copper wires, with ball shear and wire pull averaging 100/spl plusmn/20 gms and 15/spl plusmn/2 gms, respectively. Five issues related to copper wire bonding of TO-22 power IC packages are discussed: 1) typical bonding failure modes; 2) the relation between bond pad composition and hardness; 3) the influence of the metal deposition systems; 4) the optimization of bonding conditions; 5) the reliability of the copper wire bonded devices.<>
Sponsorship	Ericsson IEEE Components, Packaging and Manufacturing Technology Society
Starting Page	423
Ending Page	429
Page Count	7
File Size	726969
File Format	PDF
ISSN	10709886
Volume Number	18
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-06-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Copper Wire Bonding Metallization Production Power system reliability Assembly Composite materials Inorganic materials Semiconductor materials
Content Type	Text
Resource Type	Article
Subject	Engineering

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