NDLI: Influence of impact ionization on the drain conductance in InAs-AlSb quantum well heterostructure field-effect transistors

Content Provider	IEEE Xplore Digital Library
Author	Brar, B. Kroemer, H.
Copyright Year	1980
Abstract	Using an InAs-AlSb heterostructure field-effect transistor (HFT) structure modified to incorporate an epitaxial p-type GaSb back gate, we measure the impact ionization current caused by hot electrons in the InAs channel. We show that the impact ionization current is only a small fraction of the deleterious increase in the drain current commonly observed in InAs-based transistors. Most of the drain current rise is caused by a feedback mechanism in which holes escaping into the substrate act like a positively charged parasitic back gate leading to an increase in the electron current flow in the channel by an amount that is large compared to the impact ionization current itself. Removal of the impact-generated holes by the epitaxial back gate breaks the feedback loop, and dramatically improves the DC characteristics of the devices, and increases the range of usable drain voltages.
Sponsorship	IEEE Electron Devices Society
Starting Page	548
Ending Page	550
Page Count	3
File Size	392710
File Format	PDF
ISSN	07413106
Volume Number	16
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Impact ionization Charge carrier processes Electrons Feedback HEMTs MODFETs Voltage Space charge Current measurement Substrates
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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