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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Kushner, L.J. Van Andrews, G. White, W.A. Delaney, J.B. Vernon, M.A. Harris, M.P. Whitmire, D.A. |
| Copyright Year | 1966 |
| Abstract | An 800-MHz monolithic mixed-signal serrodyne modulator IC has been developed in a GaAs/AlGaAs HBT HI/sub 2/L process optimized for digital applications. This 3/spl times/2.8 mm, 2000+ transistor chip consists of a 7-b phase accumulator driving a vector modulator, implemented as a pair of balanced mixers, 5-b switched attenuators, buffer amplifiers, and central circuits. The balanced mixer's LO leakage and 3-1 products are typically 25 dB below the carrier at the nominal operating point, with all other products better than -50 dBc. Over a 32-dB control range, the 5-b switched attenuator typically achieves worst-case amplitude and phase errors of 1.5 dB and 1.5/spl deg/, respectively, from 50-250 MHz. DC-level variations versus attenuator-state limit the spurious response of an 800-MHz Composite DDS based on this serrodyne modulator to -20 dBc. Post-fabrication modeling indicates that a 5/spl deg/C thermal gradient across the IC may be responsible for this undesired dc-level variation. This first generation chip consumes 2.5 W of dc power and clocks to speeds in excess of 925 MHz.< |
| Sponsorship | IEEE Solid-State Circuits Society IEEE Electron Devices Society IEEE Circuits and Systems Society Japan Society of Applied Physics (JSAP) IEEE Microwave Theory and Techniques Society IEEE San Francisco Section Bay Area Council Univ. PA IEEE |
| Starting Page | 1041 |
| Ending Page | 1050 |
| Page Count | 10 |
| File Size | 1239593 |
| File Format | |
| ISSN | 00189200 |
| Volume Number | 30 |
| Issue Number | 10 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1995-10-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Gallium arsenide Heterojunction bipolar transistors Attenuators Integrated circuit modeling Digital modulation Application specific integrated circuits Monolithic integrated circuits Digital integrated circuits Phase modulation Switching circuits |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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