NDLI: Carrier energy relaxation time in quantum-well lasers

Content Provider	IEEE Xplore Digital Library
Author	Chin-Yi Tsai Chin-Yao Tsai Yu-Hwa Lo Eastman, L.F.
Copyright Year	1965
Abstract	Carrier energy relaxation via carrier-polar optical phonon interactions with hot phonon effects in multisubband quantum-well structures is theoretically studied by using both bulk longitudinal optical phonons and confined longitudinal optical phonons. We find that the width and the depth of quantum wells only have moderate effects on carrier energy relaxation rates. Our results also indicate that the difference of energy relaxation rates between the quantum well and the bulk material is not significant. We investigate the effects of longitudinal optical phonon lifetimes on the carrier energy relaxation rate. Neglect of the finite decay time of longitudinal optical phonons will significantly underestimate the carrier energy relaxation time; this not only contradicts the experimental results but also severely underestimates the nonlinear gain coefficient due to carrier heating. The implications of our theoretical results in designing high-speed quantum-well lasers are discussed.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	2148
Ending Page	2158
Page Count	11
File Size	1711618
File Format	PDF
ISSN	00189197
Volume Number	31
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Quantum well lasers Phonons Heating High speed optical techniques Nonlinear optics Optical scattering Laser theory Temperature Stimulated emission Radiative recombination
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

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