NDLI: Effects of measurement frequency and temperature anneal on differential gate capacitance spectra observed in hot carrier stressed MOSFET's

Content Provider	IEEE Xplore Digital Library
Author	Liang, C.H. Ang, D.S. Tan, S.E.
Copyright Year	1963
Abstract	Hot carrier generated fixed and interface traps, located at the Si-SiO/sub 2/ interface near the drain junction, are observed from the gate-to-drain capacitance of the MOS transistor, using an AC measurement signal applied to the drain. When the channel is biased in inversion, the drain junction is forward biased and carriers from the AC signal source are readily injected into the channel, leading to charge exchange between the inversion carriers and the traps located in one half of the band gap. In channel depletion, the drain junction is reverse biased, and charge exchange is between the substrate majority carriers and traps located in the other half of the band gap. The charge interaction manifests itself in a differential gate capacitance, extracted from pre- and post-stress gate capacitance voltage curves. The differential capacitance spectrum shows two distinct peaks, which are attributed to the response of donor and acceptor interface traps, located on either half of the band gap. This model is supported by capacitance measurements at different frequencies. Lower frequencies lead to a proportionally larger increase in the depletion regime response. Prolonged stress results in the convolution of the two peaks. A reverse bias on the drain leads to the deconvolution of the spectrum, allowing the two peaks to be clearly resolved. Trap response may be masked by the fixed charge, but this can be overcome by depopulation of trapped electrons or neutralization of trapped holes through elevated temperature anneal. The differential gate-to-drain capacitance allows the electrical identification of both donor and acceptor interface traps in the same device.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	1528
Ending Page	1535
Page Count	8
File Size	822807
File Format	PDF
ISSN	00189383
Volume Number	42
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature measurement Capacitance measurement Frequency measurement Stress measurement Annealing Hot carriers Electron traps Photonic band gap AC generators Signal generators
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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