NDLI: Leakage current of undoped LPCVD polycrystalline silicon thin-film transistors

Content Provider	IEEE Xplore Digital Library
Author	Dimitriadis, C.A. Coxon, P.A. Economou, N.A.
Copyright Year	1963
Abstract	The leakage current of thin-film transistors on undoped polycrystalline silicon layers, deposited by low-pressure chemical vapor deposition, is investigated in relation to the deposition pressure. For films deposited at pressure 40 mTorr, the leakage current I/sub L/ is controlled by the intrinsic resistivity of the film. The increase of the current I/sub L/ with increasing gate and drain bias voltages is due to the Joule-induced-heating effect. For films deposited at pressures below 40 mTorr, the leakage current is controlled by the reverse-biased junction at the drain end. In this case, the minimum leakage current is modeled as thermal generation current arising from midgap Coulombic defect trap states. When the gate and drain bias voltages are increased, the thermally generated current is enhanced by the Poole-Frenkel effect due to high electric fields at the drain junction. Such high electric fields at the drain end can arise from doping inhomogeneities because of fast diffusion through the grain boundaries of the implanted drain dopant. At high bias voltages, a deviation from linearity of the Poole-Frenkel current-voltage characteristics is observed due to the hot carrier effect.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	950
Ending Page	956
Page Count	7
File Size	637004
File Format	PDF
ISSN	00189383
Volume Number	42
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Leakage current Silicon Semiconductor thin films Voltage Pressure control Thin film transistors Chemical vapor deposition Conductivity Doping Nonuniform electric fields
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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