NDLI: Lifetime prediction methods for p-MOSFET's: a comparative study of standard and charge-pumping lifetime criteria

Content Provider	IEEE Xplore Digital Library
Author	Bravaix, A. Vuillaume, D.
Copyright Year	1963
Abstract	Lifetime prediction methods are compared for buried-channel p-MOSFET's DC-stressed under hot-electron injections. Experiments are achieved with current-voltage and charge-pumping measurements in order to find a reliable lifetime evaluation with regard to the time-dependent degradation. It is shown that a large difference appears whether one considers a logarithmic or a power time-dependent law for the degradation of the maximum of the transconductance. This arises from the difficulty to extrapolate to the working voltage when the gradients vary with time. We used a modified charge-pumping technique in order to compare the hot-carrier immunity of different drain structures. The local increase in the negative trapped charge is compared to the degradations of the threshold-voltage shift, the relative changes of the drain current, and of the transconductance. A close correlation is found between the transconductance degradation and the oxide charge in conventional p-devices where the degradation is dominated by the channel shortening. In deep-submicrometer LDD p-devices, the increase in oxide charge and interface traps in the graded-drain region plays a significant role in the change in the channel shortening and series resistance. The local build-up of the oxide charge is shown to grow logarithmically in time. Comparisons of a lifetime prediction method based on the trapping phenomena with I-V lifetime criteria show that the maximum of the transconductance degradation is better correlated to the oxide charge than the other parameters.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	101
Ending Page	108
Page Count	8
File Size	894207
File Format	PDF
ISSN	00189383
Volume Number	42
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Prediction methods MOSFET circuits Charge pumps Degradation Transconductance Voltage Electron traps Current measurement Hot carriers CMOS technology
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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