NDLI: A manufacturing sensitivity analysis of 0.35 /spl mu/m LDD MOSFET's

Content Provider	IEEE Xplore Digital Library
Author	Hasnat, K. Murtaza, S. Tasch Jr., A.F.
Copyright Year	1988
Abstract	Fundamental to successful manufacturing of integrated circuits is the achievement of sufficient control in all process steps to realize, with very high yield, fully functional circuits whose performance and reliability conform to pre-determined standards. Towards this end, it is increasingly necessary to relate in a quantitative manner the sensitivity of the electrical performance of the final devices and circuits to variations in structural parameters and doping profiles, which in turn can be related to process and tool performance variations. In this paper, we describe the results of an analysis performed to quantify the sensitivity of the electrical parameters of a 0.35 /spl mu/m LDD MOSFET to variations in the doping and structural parameters of the device that are anticipated in manufacturing. A central-composite design was used to develop second-order models for six key device electrical parameters. The resulting models are manifested as second-order equations relating the device electrical parameter variations to random variations in seven key device structure and doping parameters. This set of equations thus allows one to understand quantitatively the source and nature of the device electrical parameter variations. A simple Monte Carlo approach is applied to predict the statistical distributions of the key device electrical parameters which result from the random manufacturing variations in the structure and doping parameters by using the quantitative relationships developed in this paper.<>
Sponsorship	IEEE Electron Devices Society IEEE Components, Packaging, and Manufacturing Technology Society IEEE Reliability Society IEEE Solid-State Circuits Society
Starting Page	53
Ending Page	59
Page Count	7
File Size	818908
File Format	PDF
ISSN	08946507
Volume Number	7
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Sensitivity analysis Doping Structural engineering Pulp manufacturing Semiconductor process modeling Equations Integrated circuit manufacture Manufacturing processes Process control Integrated circuit yield
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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