NDLI: Effects of surface preparation on the electrical and reliability properties of ultrathin thermal oxide

Content Provider	IEEE Xplore Digital Library
Author	Kafai Lai Ming-yin Hao Wei-ming Chen Lee, J.C.
Copyright Year	1980
Abstract	A new wafer cleaning procedure has been developed for ultrathin thermal oxidation process (/spl les/50 /spl Aring/). It consists of a conventional RCA clean and a two-dip step, first in diluted HF and then in a methanol/HF solution, with no final DI water rinse. The effectiveness of this cleaning process has been compared to other commonly used cleaning methods, based on the dielectric integrity of the ultrathin thermal oxide grown. It has been found that this two-dip method produces oxides with reduced leakage current and stress-induced leakage current, which are believed to be the critical parameters for ultrathin oxide. Furthermore, this new procedure increases dielectric breakdown field, E/sub bd/ and charge-to-breakdown, Q/sub bd/ (both intrinsic and defect-related values) of ultrathin oxides. The improvement is believed to be due to enhanced silicon surface passivation by hydrogen and the reduced surface micro-roughness.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	446
Ending Page	448
Page Count	3
File Size	291698
File Format	PDF
ISSN	07413106
Volume Number	15
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hafnium Leakage current Passivation Surface cleaning Oxidation Silicon Electric breakdown Lifting equipment Water Dielectrics
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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