NDLI: Measurement of the anisotropy of two-photon absorption coefficients in zincblende semiconductors

Content Provider	IEEE Xplore Digital Library
Author	Dvorak, M.D. Schroeder, W.A. Andersen, D.R. Smirl, A.L. Wherrett, B.S.
Copyright Year	1965
Abstract	The imaginary parts of all of the independent two-photon-resonant susceptibility tensor elements in GaAs and CdTe are determined by using a two-beam coupling technique to measure the anisotropy of the two-photon absorption coefficient p as a function of crystal orientation and probe polarization. Anisotropy parameters of -0.76 and -0.46 are measured for GaAs and CdTe, respectively, at a wavelength of 950 nm. These correspond to a 45% variation in /spl beta/ for GaAs, between 19 and 30 cm/GW, for radiation polarized along the [001] and the [111] crystallographic axes, respectively, and a 25% variation between 14 and 18 cm/GW for CdTe. By invoking intrinsic and zincblende symmetry, we present macroscopic expressions that accurately account for the dependence of single-beam two-photon absorption on the orientation of the crystal with respect to the polarization of the light and also expressions that describe the two-photon absorption of a probe when it is polarized either perpendicular or parallel to the pump in degenerate-four-wave-mixing experiments. Finally, we discuss the microscopic origins of this anisotropy of two-photon absorption in terms of simple k/spl middot/p models of the band structure, and we find the anisotropy to be caused predominantly by the mixing of the valence band with a higher conduction hand. This simple theory produces magnitudes consistent with experimental results and predicts that the anisotropy scales linearly with the ratio of the lower bandgap to the higher bandgap: E/sub g//E'/sub g/.<>
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	256
Ending Page	268
Page Count	13
File Size	1478571
File Format	PDF
ISSN	00189197
Volume Number	30
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Anisotropic magnetoresistance Absorption Gallium arsenide Wavelength measurement Probes Optical polarization Photonic band gap Tensile stress Crystallography Microscopy
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

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