NDLI: Total dose effects in conventional bipolar transistors and linear integrated circuits

Content Provider	IEEE Xplore Digital Library
Author	Johnston, A.H. Swift, G.M. Rax, B.G.
Copyright Year	1963
Abstract	Total dose damage is investigated for discrete bipolar transistors and linear integrated circuits that are fabricated with older processing technologies, but are frequently used in space applications. The Kirk effect limits the current density of discrete transistors with high collector breakdown voltage, increasing their sensitivity to ionizing radiation because they must operate low injection levels. Bias conditions during irradiation had different effects on discrete and integrated circuit transistors: discrete devices were strongly dependent on bias conditions, whereas damage in the linear ICs was nearly the same with or without bias. There were also large differences in the response of these devices at low dose rates. None of the discrete transistors exhibited enhanced damage at low dose rates, whereas substantially more damage occurred in the linear devices under low dose rate conditions, particularly for parameters that rely directly on p-n-p transistors. The threshold for dose rate effects in p-n-p transistors was about 0.01 rad(Si)/s, which is approximately two orders of magnitude lower than the corresponding threshold for n-p-n transistors in integrated circuits.<>
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	2427
Ending Page	2436
Page Count	10
File Size	1083261
File Format	PDF
ISSN	00189499
Volume Number	41
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Bipolar transistors Analog integrated circuits Integrated circuit technology Space technology Degradation Propulsion Laboratories Ionizing radiation Paper technology Testing
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Impact of Total Ionizing Dose on the Analog Single Event Transient Sensitivity of a Linear Bipolar Integrated Circuit

Recent advances in understanding total-dose effects in bipolar transistors

Analysis of Bias Effects on the Total-Dose Response of a Bipolar Voltage Comparator

Recent advances in understanding total-dose effects in bipolar transistors

Analysis of Total-Dose Response of a Bipolar Voltage Comparator Combining Radiation Experiments and Design Data

Testing and Qualifying Linear Integrated Circuits for Radiation Degradation in Space

Review and Analysis of the Radiation-Induced Degradation Observed for the Input Bias Current of Linear Integrated Circuits

Accelerated Irradiation Method to Study Synergy Effects in Bipolar Integrated Circuits

SEM Analysis of Ionizing Radiation Effects in Linear Integrated Circuits

Total dose effects in conventional bipolar transistors and linear integrated circuits

Similar Documents

Impact of Total Ionizing Dose on the Analog Single Event Transient Sensitivity of a Linear Bipolar Integrated Circuit

Recent advances in understanding total-dose effects in bipolar transistors

Analysis of Bias Effects on the Total-Dose Response of a Bipolar Voltage Comparator

Recent advances in understanding total-dose effects in bipolar transistors

Analysis of Total-Dose Response of a Bipolar Voltage Comparator Combining Radiation Experiments and Design Data

Testing and Qualifying Linear Integrated Circuits for Radiation Degradation in Space

Review and Analysis of the Radiation-Induced Degradation Observed for the Input Bias Current of Linear Integrated Circuits

Accelerated Irradiation Method to Study Synergy Effects in Bipolar Integrated Circuits

SEM Analysis of Ionizing Radiation Effects in Linear Integrated Circuits

Total dose effects in conventional bipolar transistors and linear integrated circuits