NDLI: An analysis of space-charge-region recombination in HBT's

Content Provider	IEEE Xplore Digital Library
Author	Searles, S. Pulfrey, D.L.
Copyright Year	1963
Abstract	The importance of including recombination in the base side of the emitter-base space-charge-region (SCR) in the computation of the current gain in AlGaAs/GaAs HBT's is investigated. Recombination due to Shockley-Read-Hall, Auger and radiative processes is considered. The interaction of the base-side SCR recombination currents with the neutral-base current and the collector current, which occurs via their dependence on the quasi-Fermi level splitting (/spl Delta/E/sub fn/) at the base-emitter junction, is not found to be a significant factor in the computation of /spl Delta/E/sub fn/. However, it is confirmed that the quasi-Fermi level splitting, as calculated from a balancing of the thermionic/tunnel current with the neutral base and collector currents, must subsequently be included in the computation of the base-side SCR currents if the current gain is not to be severely underestimated. A discussion of why the ideality factor is /spl ap/1 for the base-side SCR currents is given. Finally, simple analytical expressions for /spl Delta/E/sub fn/ and the SCR recombination currents are presented and should prove useful for HBT device- and circuit-simulation purposes.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	476
Ending Page	483
Page Count	8
File Size	732112
File Format	PDF
ISSN	00189383
Volume Number	41
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-04-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Heterojunction bipolar transistors Thyristors Spontaneous emission Physics computing Circuits Electron emission Equations Councils Telecommunications
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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