NDLI: The influence of emitter-base junction design on collector saturation current, ideality factor, Early voltage, and device switching speed of Si/SiGe HBT's

Content Provider	IEEE Xplore Digital Library
Author	Gruhle, A.
Copyright Year	1963
Abstract	In advanced Si/SiGe HBT's the base is doped much higher than emitter and collector. Base outdiffusion becomes a problem because of the formation of parasitic barriers that degrade device performance. The simulations and experiments of this paper show that a strong correlation exists between (a) the drop of the collector saturation current, (b) an increase of its ideality factor and (c) a rise of the switching time due to an additional emitter delay which can no longer be neglected. Curves of these three parameters as a function of Si/SiGe heterointerface position and outdiffusion at the base-emitter interface have been calculated and indicate that only a few nm shift may cause severe device degradation. An important result is that the collector current ideality factor or the inverse Early voltage is a very sensitive indicator for the quality of the emitter-base interface. Application of these results have yielded experimental SiGe HBT's with transit frequencies above 60 GHz.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	198
Ending Page	203
Page Count	6
File Size	614094
File Format	PDF
ISSN	00189383
Volume Number	41
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Voltage Silicon germanium Germanium silicon alloys Frequency Degradation Heterojunction bipolar transistors Leakage current Added delay Delay effects Computer interfaces
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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