NDLI: 8-element linear array monolithic p-i-n MODFET photoreceivers using molecular beam epitaxial regrowth

Content Provider	IEEE Xplore Digital Library
Author	Berger, P.R. Dutta, N.K. Humphrey, D.A. Smith, P.R. Wang, S.-J. Montgomery, R.K. Sivco, D. Cho, A.Y.
Copyright Year	1989
Abstract	An 8-element linear array of single-stage integrating front-end photoreceivers using molecular beam epitaxial (MBE) regrowth was investigated. Each element consisted of a p-i-n In/sub 0.53/Ga/sub 0.47/As photodiode integrated with a selectively regrown pseudomorphic In/sub 0.65/Ga/sub 0.35/As/In/sub 0.52/Al/sub 0.48/As MODFET. Cutoff frequencies of 1.0- mu m discrete regrown MODFETs were f/sub t/=24 GHz and f/sub max/=50 GHz. Transconductance of the regrown MODFETs was as high as 495 mS/mm with a current density (I/sub ds/) of 250 mA/mm. The 3-dB bandwidth of the photoreceiver was measured to be 1 GHz. The bit rate sensitivity at 1 Gb/s was -31.8 dBm for BER 10/sup -9/ using 1.55 mu m excitation for a photoreceiver with an anti-reflection coating. The single-stage amplifier exhibited up to 25 dB flatband gain of the photocurrent, and a two-stage amplifier was up to 31 dB of gain. Good uniformity between each photoreceiver element in the array was achieved. Electrical crosstalk between photoreceiver elements was estimated to be approximately -34 dB.<>
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	63
Ending Page	66
Page Count	4
File Size	472600
File Format	PDF
ISSN	10411135
Volume Number	5
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1993-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	PIN photodiodes MODFETs HEMTs Molecular beam epitaxial growth Gain Cutoff frequency Transconductance Current density Bandwidth Bit rate
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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