NDLI: Damage correlations in semiconductors exposed to gamma, electron and proton radiations

Content Provider	IEEE Xplore Digital Library
Author	Summers, G.P. Burke, E.A. Shapiro, P. Messenger, S.R. Walters, R.J.
Copyright Year	1963
Abstract	The use of nonionizing energy loss (NIEL) in predicting the effect of gamma, electron, and proton irradiations on Si, GaAs, and InP devices is discussed. The NIEL for electrons and protons has been calculated from the displacement threshold to 200 MeV. Convoluting the electron NIEL with the slowed down Compton secondary electron spectrum gives an effective NIEL for CO/sup 60/ gammas, enabling gamma-induced displacement damage to be correlated with particle results. The fluences of 1 MeV electrons equivalent to irradiation with 1 Mrad(Si) for Si, GaAs, and InP are given. Analytic proton NIEL calculations and results derived from the Monte Carlo TRIM agree exactly, as long as straggling is not significant. The NIEL calculations are compared with experimental proton and electron damage coefficients using solar cells as examples. A linear relationship is found between the NIEL and proton damage coefficients for Si, GaAs, and InP devices. For electrons, there appears to be a linear dependence for n-Si and n-GaAs, but for p-Si there is a quadratic relationship which decreases the damage coefficient at 1 MeV by a factor of approximately 10 below the value for n-Si.<>
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	1372
Ending Page	1379
Page Count	8
File Size	818297
File Format	PDF
ISSN	00189499
Volume Number	40
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1993-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electrons Protons Gallium arsenide Indium phosphide Energy loss Laboratories Photovoltaic cells High temperature superconductors Physics Monte Carlo methods
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Nonionizing energy loss (NIEL) for heavy ions

Correlation of Electron Radiation Induced-Damage in GaAs Solar Cells

Gallium arsenide solar cell radiation damage study

Low Energy Proton Damage to Solar Cells

Application of displacement damage dose analysis to low-energy protons on silicon devices

Co/sup 60/ gamma ray and electron displacement damage studies of semiconductors

Proton damage on InGaAs solar cells having a 3 /spl mu/m InP window layer

Electron and proton damage coefficients for heteroepitaxial InP solar cells

Effect of Omnidirectional Proton Irradiation On Shielded Solar Cells

Damage correlations in semiconductors exposed to gamma, electron and proton radiations

Similar Documents

Nonionizing energy loss (NIEL) for heavy ions

Correlation of Electron Radiation Induced-Damage in GaAs Solar Cells

Gallium arsenide solar cell radiation damage study

Low Energy Proton Damage to Solar Cells

Application of displacement damage dose analysis to low-energy protons on silicon devices

Co/sup 60/ gamma ray and electron displacement damage studies of semiconductors

Proton damage on InGaAs solar cells having a 3 /spl mu/m InP window layer

Electron and proton damage coefficients for heteroepitaxial InP solar cells

Effect of Omnidirectional Proton Irradiation On Shielded Solar Cells

Damage correlations in semiconductors exposed to gamma, electron and proton radiations