NDLI: The characterization of hot carrier damage in p-channel transistors

Content Provider	IEEE Xplore Digital Library
Author	Doyle, B.S. Mistry, K.R.
Copyright Year	1963
Abstract	Damage in surface channel p-MOS transistors arising from hot-carrier stress is examined using a recently proposed lifetime extraction method. It is shown that the p-MOS behavior with respect to hot-carrier stress runs counter to that of n-MOS transistors in many respects and has to be considered separately. Not only are the well-known post-stress gains in drive current obtained for p-MOS transistors, but also the measurement of the I-V characteristics with the stress damage at the source and drain ends shows effects opposite to those of n-MOS devices. This is attributed to coulombic screening by the channel charge. Stressing transistors in inverter-like and pass-transistor-like modes are also discussed, and it is found that p-MOS transistors are much more sensitive to pass-transistor-like damage than n-channel devices, due to increased channel length shortening in the pass transistor mode. It is shown that whereas at long gate lengths (>0.5 mu m) the degradation is limited to drain current changes, at shorter channel lengths (<0.5 mu m), significant threshold voltage shifts arise.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	152
Ending Page	156
Page Count	5
File Size	603868
File Format	PDF
ISSN	00189383
Volume Number	40
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1993-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hot carriers Stress measurement Degradation Current measurement Transistors Transconductance Counting circuits Gain measurement Hot carrier effects Silicon
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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