NDLI: A physics-based, analytical heterojunction bipolar transistor model, including thermal and high-current effects

Content Provider	IEEE Xplore Digital Library
Author	Liou, J.J. Liou, L.L. Huang, C.I. Bayraktaroglu, B.
Copyright Year	1963
Abstract	A detailed, analytical model for predicting the DC and high-frequency performance of AlGaAs/GaAs graded heterojunction bipolar transistors (HBTs) is presented. The model is developed based on the relevant device physics, such as current-induced base pushout and thermal effects. The current gain, cutoff frequency, and maximum frequency versus the collector current density, which is a function of the applied voltage as well as the corresponding temperature in the HBT, are calculated. The results suggest that the conventional HBT model, which assumes the HBT temperature is the same as that of the ambient, can overestimate the three figures of merit considerably when the collector current density is high. Furthermore, it is shown that the present model correctly explains such experimentally observed HBT high-current behavior as the rapid falloff of the current gain and cutoff frequency. The model predictions compare favorably with the results obtained from a model which solves numerically the Poisson and continuity equations coupled with the lattice heat equation.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	1570
Ending Page	1577
Page Count	8
File Size	656342
File Format	PDF
ISSN	00189383
Volume Number	40
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1993-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Heterojunction bipolar transistors Cutoff frequency Current density Temperature Predictive models Poisson equations Analytical models Gallium arsenide Physics Voltage
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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