NDLI: Resolving degradation mechanisms in ultra-high performance N-p-n heterojunction bipolar transistors

Content Provider	IEEE Xplore Digital Library
Author	Chang, Y.-H. Li, G.P.
Copyright Year	1963
Abstract	The conduction band barrier caused by base dopant outdiffusion is investigated for MBE-grown Al/sub x/Ga/sub 1-x/As/GaAs N-p-n linearly graded heterojunction bipolar transistors (HBTs). The change of the B-E heterojunction conduction band barrier can be directly revealed by a novel technique based on the diffusion-thermionic emission current model. This is accomplished by measuring the inverted collector current ratio at two different heterojunction reverse biases. In addition, this ratio is found to correlate with an anomalous base current component measured at low temperature. The heterojunction potential barrier and the anomalous base current component are attributed to beryllium redistribution during MBE growth and forward current stress. This suggests that the diffusion and incorporation of beryllium dictate V/sub BE/ uniformity and long-term reliability of HBTs.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	692
Ending Page	697
Page Count	6
File Size	637250
File Format	PDF
ISSN	00189383
Volume Number	40
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1993-04-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Degradation Heterojunction bipolar transistors Current measurement Doping Gallium arsenide Temperature measurement Thermal stresses Photonic band gap Capacitance Ohmic contacts
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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