NDLI: High-voltage amorphous silicon thin-film transistors

Content Provider	IEEE Xplore Digital Library
Author	Martin, R.A. Da Costa, V.M. Hack, M. Shaw, J.G.
Copyright Year	1963
Abstract	High-voltage MOSFETs have been fabricated in a large-area thin-film amorphous silicon technology. The transistors have an offset gate structure which allows them to operate at an excess of 400 V. Basic fabrication steps and structure are discussed. These transistors have a gate-controlled region in series with an offset region where the current is space charge limited. The I/sub D/-V/sub D/ characteristics exhibit a unique instability under drain voltage stress; there is a parallel shift in the I/sub D/ versus V/sub D/ characteristic to a higher V/sub D/. This instability arises from the creation of localized states in the a-Si during depletion. It is analyzed through experiment and two-dimensional simulation. Structural variations are described, including the application of a field plate, to stabilize transistor drive current. Reliability and process uniformity are discussed for arrays of transistors. An appropriate circuit simulation model is discussed. Operation of output drive circuits with high-voltage thin-film transistors (TFTs) is shown, and the application of these to an electrographic plotter is described.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	634
Ending Page	644
Page Count	11
File Size	1137085
File Format	PDF
ISSN	00189383
Volume Number	40
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1993-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Amorphous silicon Thin film transistors MOSFETs Circuit simulation Semiconductor thin films Space technology Fabrication Space charge Voltage Stress
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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