NDLI: Manufacturability of rapid-thermal oxidation of silicon: oxide thickness, oxide thickness variation, and system dependency

Content Provider	IEEE Xplore Digital Library
Author	Deaton, R. Massoud, H.Z.
Copyright Year	1988
Abstract	The dependence of oxide thickness, and oxide thickness variation within a wafer and wafer-to-wafer on process variables was studied in rapid-thermal processing systems that differed in chamber configuration and construction, incoherent light source, and pyrometers used for temperature measurement. Mechanisms for oxide growth and oxide thickness variation in rapid-thermal oxidation are discussed. Thermally induced stress, lamp configuration, and convective cooling affected the oxide thickness variation within a wafer. Wafer-to-wafer oxide thickness variation depended on the material of chamber construction, quartz or metal, and was related to residual heating for longer oxidations. For the same processing conditions, the oxide thickness was different for different systems, due to temperature error and a photonic component to rapid-thermal oxidation. Analysis of empirical oxide thickness models revealed a silicon orientation effect and a mechanism related to oxidant transport that was common to rapid-thermal oxidation in different systems.<>
Sponsorship	IEEE Electron Devices Society IEEE Components, Packaging, and Manufacturing Technology Society IEEE Reliability Society IEEE Solid-State Circuits Society
Starting Page	347
Ending Page	358
Page Count	12
File Size	1026534
File Format	PDF
ISSN	08946507
Volume Number	5
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1992-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Manufacturing Oxidation Silicon Thermal stresses Light sources Temperature measurement Rapid thermal processing Residual stresses Lamps Cooling
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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