NDLI: High-quality MNS capacitors prepared by jet vapor deposition at room temperature

Content Provider	IEEE Xplore Digital Library
Author	Wang, D. Ma, T.-P. Golz, J.W. Halpern, B.L. Schmitt, J.J.
Copyright Year	1980
Abstract	The properties of metal-nitride-Si (MNS) capacitors in which the silicon nitride layer is produced by the jet vapor deposition (JVD) technique at room temperature are reported. Despite the room-temperature deposition, the electrical properties of these devices are far better than any previously reported MNS capacitors. Especially remarkable is the low density of interface traps (D/sub it/<5*10/sup 10//cm/sup 2/-eV near midgap). In addition, these MNS capacitors are highly resistant to damage caused by hot electrons and ionizing radiation.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	482
Ending Page	484
Page Count	3
File Size	240246
File Format	PDF
ISSN	07413106
Volume Number	13
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1992-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Capacitors Chemical vapor deposition Etching Silicon Substrates Annealing Plasma temperature Dielectric thin films Sputtering
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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High-quality MNS capacitors prepared by jet vapor deposition at room temperature