NDLI: New split FET technique for measurements of source series resistance applied to amorphous silicon thin film transistors

Content Provider	IEEE Xplore Digital Library
Author	Globus, T. Shur, M. Byun, Y. Hack, M.
Copyright Year	1980
Abstract	A split field-effect transistor (SFET) is proposed for measuring source and drain series resistances. This device is made by splitting a conventional thin-film transistor (TFT) from the source to the drain in such a way that the gate width of each half is a linear function of the distance from the source. The analysis shows that the intrinsic current-voltage characteristics of such a device should be symmetrical with respect to the polarity of the drain-to-source voltage. Hence, the observed asymmetry of the device characteristic yields direct information about the differences between source and drain series resistances, which are inversely proportional to the contact width. For an a-Si TFT it is shown that the source series resistance is proportional to the inverse square root of the drain current in a wide range of currents. The technique can be applied to a large variety of FETs. For a-Si TFTs, it provides an accurate tool for determining the effects of contact overlap, bias stress, and temperature dependences of series resistances.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	108
Ending Page	110
Page Count	3
File Size	266045
File Format	PDF
ISSN	07413106
Volume Number	13
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1992-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	FETs Electrical resistance measurement Amorphous silicon Thin film transistors Contacts Voltage Silicon compounds Computer hacking Dielectric substrates Passivation
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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